Low-loss SiN thin film

Product Description

Silicon nitride has a wide transparency window and plays an important role in the fields of thin film optics, integrated photonic devices, nonlinear optics, etc.

We provide high quality SiN thin film with customized film thickness from 20 nm to 800 nm

Size	Si Layer Information	SiO2 Thickness	Si3N4 Thickness	Si3N4 Deposition Process
4 inch	Diameter:4″-100mm Material: Silicon Type/Dopant:P/Boron Orientation:(100) Resistivity: 1-20 ohm-cm Thickness:525 ± 25um Surface: SSP	3um	<=400nm	LPCVD
4 inch	Diameter:4″-100mm Material: Silicon Type/Dopant:P/Boron Orientation:(100) Resistivity: 1-20 ohm-cm Thickness:525 ± 25um Surface: SSP	3um	400nm-800nm	LPCVD
6 inch	Diameter:6″-150mm Material: Silicon Orientation:(100) Thickness:625 ± 10um Surface: SSP	3um	<=400nm	LPCVD
6 inch	Diameter:6″-150mm Material: Silicon Orientation:(100) Thickness:625 ± 10um Surface: SSP	3um	400nm-800nm	LPCVD
4 inch	Diameter:4″-100mm Material: Silicon Type/Dopant:P/Boron Orientation:(100) Resistivity: 1-20 ohm-cm Thickness:525 ± 25um Surface: SSP	6um	200nm	LPCVD
6 inch	Diameter:6″-150mm Material: Silicon Orientation:(100) Thickness:625 ± 10um Surface: SSP	8um	200nm	LPCVD